08.08.2016 Are GaInP based VECSEL useful for high-power applications and ultra-fast pulses?

Dr. Michael Jetter, Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart

Zeit: Montag, 15.08.2016, 16:00 Uhr
Ort: WZMW, Hans-Meerwein-Str. 6 (Lahnberge), Seminarraum 02D36

Abstract

The GaInP material system is widely used for electrically driven edge- or surface emitting laser. Despite of this success the devices suffer from the limited carrier confinement of the AlGaInP/GaInP active region. The question arises if this material system is nevertheless appropriate for "high-power" devices as for example a vertical external cavity surface emitting laser.

In this talk, I will present the actual development of direct red emitting VECSEL. I will show that more than Watt level cw output powers are reachable in the wavelength range around 660 nm. Intra-cavity frequency doubling leads then to applicable laser powers in the UV. Furthermore, by applying the common mode-locking techniques, ultra-short pulses are formed. Finally, a new concept to overcome the limitations of conventional VECSELs, a membrane external cavity surface emitting laser (MECSEL) will be introduced.