16.07.2018 Release of carriers from traps enhanced by hopping

Dr. Alexey V. Nenashev, Institute of Semiconductor Physics and Novosibirsk State University, Novosibirsk, Russland

Zeit: Montag, 23.07.2018, 10:15 Uhr
Ort: Fachbereich Physik, Renthof 6, Seminarraum 00014

Abstract

Analytical calculations evidence that hopping transitions of charge carriers between localized states in the band tails can substantially enhance the process of the carrier release from the traps into the conducting states above the band edges induced by the applied electric field. The strength of the effect depends on the concentration of the localized states, on their energy distribution, on the localization length of carriers in the localized states, on the carrier effective mass, on the depth of the given trap, at which a carrier is initially placed, on temperature and on the strength of the applied electric field.

A recipe is suggested for studying the effect numerically without straightforward simulations. The recipe is based on the solution of a set of algebraic equations. Moreover, a closed form analytical expression is derived which is shown by the numerical solution of the algebraic equations and by the straightforward Monte Carlo simulations to be sufficiently accurate at high concentrations of localized band tail states.