Hauptinhalt
Publikationen
2023
Accurate first principles band gap predictions in strain engineered ternary III-V semiconductors
B. Mondal, M. Kröner, T. Hepp, K. Volz, and R. Tonner-Zech
Phys. Rev. B 108 (3) (2023), 035202
Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory
B. Mondal, R. Tonner-Zech
Physica Scripta 98 (6) (2023), 065924
2,6-Diisopropylphenyl substituted Bismuth Halide and Interpnictogen Compounds
T. Dunaj, M. Egorycheva, A. Arebi, K. Dollberg, C. von Hänisch
Z. Anorg. Allg. Chem. 649 (6-7) (2023), e202300004
2022
Heavy Chains: Synthesis, Reactivity and Decomposition of Interpnictogen Chains with Terminal Diaryl Bismuth Fragments
T. Dunaj, C. von Hänisch
Chem. Eur. J. 28 (69) (2022), e202202932
Quantitative composition determination by ADF-STEM at a low angular regime: a combination of EFSTEM and 4DSTEM
S. Firoozabadi, P. Kükelhan, A. Beyer, J. Lehr, D. Heimes, K. Volz
Ultramicroscopy 240 (2022), 113550
Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder
A. V. Nenashev, F. Gebhard, K. Meerholz, S. D. Baranovskii
In: Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory (Eds. Hideo Hosono, Hideya Kumomi)
John Wiley & Sons, Ltd. (2022), pp. 125 - 144
Binary interpnictogen compounds bearing diaryl bismuth fragments bound to all lighter pnictogens
T. Dunaj, K. Dollberg and C. von Hänisch
Dalton Trans. 51 (19) (2022), pp. 7551 - 7560
Phase Control of Multivalent Vanadium Oxides VOx by Ion-Beam Sputter-Deposition
M. Becker, J. Kessler, F. Kuhl, S. L. Benz, L. Chen, A. Polity, P. J. Klar, S. Chatterjee
Phys. Status Solidi A 219 (9) (2022), 2100828
Room temperature laser emission of (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type-II 'W' quantum well heterostructures
J. Lehr, C. Ritter, S. Reinhard, A. Ruiz Perez, C. von Hänisch, W. Stolz
Electron. Lett. 58 (8) (2022), pp. 327 - 329
Embedding Quaternary V1–x–ySrxWyO2 into Multilayer Systems to Enhance Its Thermochromic Properties for Smart Glass Applications
F. Kuhl, M. Becker, S. L. Benz, J. Hauptmann, J. Kessler, S. Chatterjee, A. Polity, and P. J. Klar
ACS Appl. Electron. Mater. 4 (1) (2022), pp. 513 - 520
Room-temperature laser operation of a Ga(In,As)/Ga(As,Bi)/Ga(In,As) W-type laser diode
T. Hepp, J. Lehr, R. Günkel, O. Maßmeyer, J. Glowatzki, A. Ruiz Perez, S. Reinhard, W. Stolz, K. Volz
Electron. Lett. 58 (2) (2022), pp. 70 - 72
2021
Bis(amido)diazadiarsetidinide and Amido(imino)arsenide Complexes of Divalent Metals
C. Ritter, C. von Hänisch
Eur. J. Inorg. Chem. 48 (2021), pp. 5103 – 5111
Probing the ultrafast gain and refractive index dynamics of a VECSEL
C. Kriso, T. Bergmeier, N. Giannini, A. R. Albrecht, M. Sheik-Bahae, S. Benis, S. Faryadras, E. W. Van Stryland, D. J. Hagan, M. Koch, G. Mette, and A. Rahimi-Iman
Appl. Phys. Lett. 119 (19) (2021), 191105
Alkyne-Functionalized Cyclooctyne on Si(001): Reactivity Studies and Surface Bonding from an Energy Decomposition Analysis Perspective
F. Pieck and R. Tonner-Zech
Molecules 26 (21) (2021), 6653
Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates
T. Hepp, J. Veletas, R. Günkel, O. Maßmeyer, J. Glowatzki, W. Stolz, S. Chatterjee, and K. Volz
Cryst. Growth Des. 21 (11) (2021), pp. 6307 – 6313
Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy
O. Maßmeyer, J. Haust, T. Hepp, R. Günkel, J. Glowatzki, C. von Hänisch, W. Stolz, K. Volz
ACS Omega 6 (42) (2021), pp. 28229 – 28241
Microscopic theory for the incoherent resonant and coherent off-resonant optical response of tellurium
S. C. Liebscher, M. K. Hagen, J. Hader, J. V. Moloney, and S. W. Koch
Phys. Rev. B 104 (16) (2021), 165201
Optimization of imaging conditions for composition determination by annular dark field STEM
S. Firoozabadi, P. Kükelhan, T. Hepp, A. Beyer, K. Volz
Ultramicroscopy 230 (2021), 113387
Self-Mode-Locked Semiconductor Disk Lasers
A. Rahimi-Iman
In: Vertical External Cavity Surface Emitting Lasers: VECSEL Technology and Applications (Eds. M. Jetter, P. Michler)
John Wiley & Sons, Ltd. (2021), pp. 357 - 385
Surface functionalization with nonalternant aromatic compounds: a computational study of azulene and naphthalene on Si(001)
F. Kreuter and R. Tonner
J. Phys.: Condens. Matter 33 (44) (2021), 444003
Structure and Reactivity of Alkaline Metal Bis(amido)diazadiarsetidinides
C. Ritter, J. Bergunde, F. Weigend, C. von Hänisch
Z. Anorg. Allg. Chem. 647 (18) (2021), pp. 1830 – 1839
Quantification of low-Z elements by energy-filtered scanning transmission electron microscopy
S. Firoozabadi, A. Beyer, P. Kükelhan, D. Heimes, J. Lehr, K. Volz
Microscopy and Microanalysis 27 (S1) (2021), pp. 1528 – 1529
Tip-Induced β-Hydrogen Dissociation in an Alkyl Group Bound on Si(001)
A. Adamkiewicz, T. Bohamud, M. Reutzel, U. Höfer, and M. Dürr
J. Phys.: Condens. Matter 33 (34) (2021), 344004
Investigation on Arsenic–Antimony- and Arsenic–Bismuth Bond Containing Interpnictogen Chain Molecules
C. Ritter, N. Michel, A. Rinow, B. Ringler, C. von Hänisch
Eur. J. Inorg. Chem. 25 (2021), pp. 2514 – 2522
Adsorption dynamics of bifunctional molecules: Allyl methyl ether on Si(001)
T. Bohamud, U. Höfer, and M. Dürr
J. Chem. Phys. 154 (12) (2021), 124708
Comparison of carrier-recombination in Ga(As,Bi)/Ga(N,As)-type-II quantum wells and W-type heterostructures
J. Veletas, T. Hepp, F. Dobener, K. Volz, and S. Chatterjee
Appl. Phys. Lett. 118 (5) (2021), 052103
2,6‐Diisopropylphenyl Substituted Bismuth Compounds: Synthesis, Structure, and Reactivity
T. Dunaj, K. Dollberg, C. Ritter, F. Dankert, C. von Hänisch
Eur. J. Inorg. Chem. 9 (2021), pp. 870 – 878
Towards Understanding the Reactivity and Optical Properties of Organosilicon Sulfide Clusters
K. Hanau, S. Schwan, M. R. Schäfer, M. J. Müller, C. Dues, N. Rinn, S. Sanna, S. Chatterjee, D. Mollenhauer, S. Dehnen,
Angew. Chem. Int. Ed. 60 (3) (2021), pp. 1176 - 1186
Angew. Chem. 133 (3) (2021), pp. 1196 - 1206
Substantial π-aromaticity in the anionic heavy-metal cluster [Th@Bi12]4−
A. R. Eulenstein, Y. J. Franzke, N. Lichtenberger, R. J. Wilson, H. L. Deubner, F. Kraus, R. Clérac, F. Weigend, S. Dehnen
Nat. Chem. 13 (2021), pp. 149 - 155
Ionic Liquid-Driven Formation of and Cation Exchange in Layered Sulfido Stannates – a CH2 Group Makes the Difference
B. Peters, M. Möbs, N. Michel, F. Tambornino, S. Dehnen
ChemistryOpen 10 (2) (2021), pp. 227 - 232
Microscopic Coulomb interaction in transition-metal dichalcogenides
J. Neuhaus, S. C. Liebscher, L. Meckbach, T. Stroucken and S. W. Koch
J. Phys.: Condens. Matter 33 (3) (2021), 035301
2020
Extension of the LDA-1/2 method to the material class of bismuth containing III–V semiconductors
S. C. Liebscher, L. C. Bannow, J. Hader, J. V. Moloney, S. W. Koch
AIP Advances 10 (11) (2020), 115003
Transfer mechanisms in semiconductor hybrids with colloidal core/shell quantum dots on ZnSe substrates
M. Wilhelm, S. C. Kommadath, W. Heimbrodt
Nanotechnology 31 (50) (2020), 505714
Structural Expansion of Chalcogenido Tetrelates in Ionic Liquids by Incorporation of Sulfido Antimonate Units
B. Peters, C. Krampe, J. Klärner, S. Dehnen
Chem. Eur. J. 26 (70) (2020), pp. 16683 - 16689
Stabilizing a metalloid {Zn12} unit within a polymetallide environment in [K2Zn20Bi16]6–
A. R. Eulenstein, Y. J. Franzke, P. Bügel, W. Massa, F. Weigend, S. Dehnen,
Nat. Commun. 11 (2020), 5122
Starting from a Fixed Geometry: Real-Time XPS Investigation of a Surface Reaction with Controlled Molecular Configurations
T. Glaser, C. Länger, J. Heep, J. Meinecke, M. G. Silly, U. Koert, and M. Dürr
J. Phys. Chem. C 124 (41) (2020), pp. 22619 – 22624
Effect of Heteroaromaticity on Adsorption of Pyrazine on the Ge(100)-2×1 Surface
T. E. Sandoval, F. Pieck, R. Tonner, and S. F. Bent
J. Phys. Chem. C 124 (40) (2020), pp. 22055 - 22068
A Methylated Oxo-Thio Stannate Cluster from a Non-Innocent Ionic Liquid
B. Peters, S. Reith, S. Dehnen
Z. Anorg. Allg. Chem. 646 (13) (2020), pp. 964 - 967
In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE
O. Maßmeyer, T. Hepp, R. Günkel, J. Glowatzki, W. Stolz, K. Volz
Applied Surface Science 533 (2020), 147401
Synthesis of a Molecule with Five Different Adjacent Pnictogens
C. Ritter, F. Weigend, C. von Hänisch
Chem. Eur. J. 26 (39) (2020), pp. 8536 – 8540
Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)
J. Glowatzki, O. Maßmeyer, M. Köster, T. Hepp, E. Odofin, C. von Hänisch, W. Stolz and K. Volz
Organometallics 39 (10) (2020), pp. 1772 – 1781
Adsorption of Methyl-Substituted Benzylazide on Si(001): Reaction Channels and Final Configurations
J. Heep, J.-N. Luy, C. Länger, J. Meinecke, U. Koert, R. Tonner, M. Dürr
J. Phys. Chem. C 124 (18) 2020, pp. 9940 – 9946
Half-occupation approach for the ab initio calculation of strained Ga(AsSb)/GaAs valence band offsets
M. J. Weseloh, J. O. Oelerich, S. W. Koch
AIP Advances 10 (2020), 045207
Electric-Field-Induced Depolarization of Si–C Bond Leads to a Strongly Reduced Barrier for Alkyl-Hopping on Si(001)
T. Bohamud, M. Reutzel, A. Adamkiewicz, U. Höfer, M. Dürr
J. Phys. Chem. C 124 (9) (2020), pp. 5270 - 5274
Variations in the Interplay of Intermetallic and Metal Chalcogenide Units in Organotin–Copper Selenide Clusters
K. Hanau, N. Rinn, S. Dehnen
Inorg. Chem. 59 (1) (2020), pp. 198 - 202
Current advances in tin cluster chemistry
B. Peters, N. Lichtenberger, E. Dornsiepen and S. Dehnen
Chem. Sci. 11 (1) (2020), pp. 16 - 26
2019
Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures
L. Ostheim, P. J. Klar, Y. Moryson, M. Rohnke, A. Beyer, M. Volk, M. Munde, W. Stolz, and K. Volz
J. Appl. Phys. 126 (21) (2019), 215704
Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors
S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner, A. V. Dvurechenskii and F. Gebhard
Europhysics Letters 127 (5) (2019), 57004
Bismuth surface segregation and disorder analysis of quaternary (Ga,In)(As,Bi)/InP alloys
J. Veletas, T. Hepp, K. Volz, and S. Chatterjee
J. Appl. Phys. 126 (13) (2019), 135705
K2Ge3As3: Fiberlike Crystals of a Narrow-Band-Gap Zintl Phase with a One-Dimensional Substructure ∞1{(Ge3As3)2–}
A. R. Eulenstein, D. Bogdanovski, H. Reinhardt, V. Miß, B. Roling, N. Hampp, R. Dronskowski, S. Dehnen
Chem. Mat. 31 (21) (2019), pp. 8839 - 8849
[{(PhSn)3SnS6}{(MCp)3S4}] (M = W, Mo): Minimal Molecular Models of the Covalent Attachment of Metal Chalcogenide Clusters on Doped Transition Metal Dichalcogenide Layers
E. Dornsiepen, F. Pieck, R. Tonner, S. Dehnen
J. Am. Chem. Soc. 141 (41) (2019), pp. 16494 - 16500
Percolation description of charge transport in amorphous oxide semiconductors
A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 100 (12) (2019), 125202
Controlling the White-Light Generation of [(RSn)4E6]: Effects of Substituent and Chalcogenide Variation
E. Dornsiepen, F. Dobener, S. Chatterjee, and S. Dehnen
Angew. Chem. Int. Ed. 58 (47) (2019), pp. 17041 - 17046
Angew. Chem. 131 (47) (2019), pp. 17197 - 17202
Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates
T. Hepp, O. Maßmeyer, D. A. Duffy, S. J. Sweeney, and K. Volz
J. Appl. Phys. 126 (8) (2019), 085707
Decomposition Mechanisms of Di-tert-butylaminoarsane (DTBAA)
O. Maßmeyer, S. Inacker, T. Hepp, J. Glowatzki, L. Nattermann, E. Sterzer, C. Ritter, C. von Hänisch, W. Stolz, K. Volz
Organometallics 38 (16) (2019), pp. 3181 - 3186
Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications
K. Volz, P. Ludewig, W. Stolz
Semiconductors and Semimetals 101 (2019), pp. 201 - 227
Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM
P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J. O. Oelerich, W. Stolz, K. Volz
J. Cryst. Growth 524 (2019), 125180
Conditional Singlet Oxygen Generation through a Bioorthogonal DNA‐targeted Tetrazine Reaction
G. Linden, L. Zhang, F. Pieck, U. Linne, D. Kosenkov, R. Tonner, O. Vázquez
Angewandte Chemie Int. Ed. 58 (57) (2019), pp. 12868 - 12873
Gezielte Singulett‐Sauerstofferzeugung durch bioorthogonale DNA‐basierte Tetrazin‐Ligation
G. Linden, L. Zhang, F. Pieck, U. Linne, D. Kosenkov, R. Tonner, O. Vázquez
Angewandte Chemie 131 (37) (2019), pp. 13000 - 13005
Composition determination for quaternary III–V semiconductors by aberration-corrected STEM
P. Kükelhan, T. Hepp, S. Firoozabadi, A. Beyer, K. Volz
Ultramicroscopy 206 (2019), 112814
MOVPE Growth and Device Applications of Ternary and Quaternary Dilute Bismide Alloys on GaAs Substrates
T. Hepp, L. Nattermann, K. Volz
In: Bismuth-Containing Alloys and Nanostructures, S. Wang, P. Lu (Eds.), Springer, Singapore
Springer Series in Materials Science 285 (2019), pp. 37 - 58
Behavior of Organotin Sulfide Clusters towards Zinc Compounds
E. Dornsiepen, S. Dehnen
Eur. J. Inorg. Chem. Special Issue 39 - 40 (2019), pp. 4306 - 4312
White‐Light Generation Upon In‐Situ Amorphization of Single Crystals of [{(Me3P)3AuSn}(PhSn)3S6] and [{(Et3P)3AgSn}(PhSn)3S6]
E. Dornsiepen, F. Dobener, N. Mengel, O. Lenchuk, C. Dues, S. Sanna, D. Mollenhauer, S. Chatterjee, S. Dehnen
Adv. Opt. Mat. 7 (12) (2019), 1801793
Dynamics of proton transfer reactions on silicon surfaces: OH-dissociation of methanol and water on Si(001)
T. Bohamud, M. Reutzel, M. Dürr, and U. Höfer
J. Chem. Phys. 150 (22) (2019), 224703
Inorganic and organic functionalisation of silicon studied by density functional theory
F. Pieck, L. Pecher, J.-N. Luy, and R. Tonner
In: High Performance Computing in Science and Engineering '18 (Eds.: W. E. Nagel, D. H. Kröner, M. M. Resch)
Springer Nature (2019), pp. 153 - 166
Ab-initio calculation of band alignments for opto-electronic simulations
J. O. Oelerich, M. J. Weseloh, K. Volz, and S. W. Koch
AIP Advances 9 (5) (2019), 055328
Advanced Electron Microscopy for III/V on Silicon Integration
A. Beyer, K. Volz
Adv. Mater. Interfaces 6 (12) (2019), 1801951
Complex dielectric function of GaAs1-xBix as a function of Bi content
M. Mahtab, R. Synowicki, V. Bahrami-Yekta, L. C. Bannow, S. W. Koch, R. B. Lewis, and T. Tiedje
Phys. Rev. Materials 3 (5) (2019), 054601
Giant bowing of the band gap and spin-orbit splitting energy in GaP1-xBix dilute bismide alloys
Z. L. Bushell, C. A. Broderick, L. Nattermann, R. Joseph, J. L. Keddie, J. M. Rorison, K. Volz, S. J. Sweeney
Scientific Reports 9 (2019), 6835
Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
L. Duschek, P. Kükelhan, A. Beyer, S. Firoozabadi, J. O. Oelerich, C. Fuchs, W. Stolz, A. Ballabio, G. Isella, K. Volz
Ultramicroscopy 200 (2019), pp. 84 - 96
Synthesis and crystal structures of novel tertiary butyl substituted (pseudo-)halogen bismuthanes
C. Ritter, B. Ringler, F. Dankert, M. Conrad, F. Kraus and C. von Hänisch
Dalton Trans. 48 (16) (2019), pp. 5253 - 5262
Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM
P. Kükelhan, A. Beyer, S. Firoozabadi, T. Hepp, K. Volz
Ultramicroscopy 201 (2019), pp. 49 - 57
Dinuclear organogermanium chalcogenide complexes as intermediates towards functionalized clusters
E. Dornsiepen and S. Dehnen
Dalton Trans. 48 (11) (2019), pp. 3671 - 3675
Microscopic calculation of the optical properties and intrinsic losses in the methylammonium lead iodide perovskite system
L. C. Bannow, J. Hader, J. V. Moloney, and S. W. Koch
APL Materials 7 (1) (2019), 011107
Controlling an SN2 Reaction by Electronic and Vibrational Excitation: Tip‐Induced Ether Cleavage on Si(001)
G. Mette, A. Adamkiewicz, M. Reutzel, U. Koert, M. Dürr, U. Höfer
Angewandte Chemie International Edition 58 (11) (2019), pp. 3417 - 3420
Angewandte Chemie 131 (11) (2019), pp. 3455 - 3458
Transition‐Metal‐Induced Rearrangement of [(PhSn)4S6] Towards Ternary CuI/Sn/S or CuII/Sn/S Clusters
E. Dornsiepen, F. Weigend, S. Dehnen
Chem. Eur. J. 25 (10), (2019), pp. 2486 - 2490
Formation of Si/organic interfaces using alkyne-functionalized cyclooctynes - precursor-mediated adsorption of linear alkynes versus direct adsorption of cyclooctyne on Si(001)
C. Länger, J. Heep, P. Nikodemiak, T. Bohamud, P. Kirsten, U. Höfer, U. Koert, and M. Dürr
J. Phys.: Condens. Matter 31 (3) (2019), 034001
Deriving bonding concepts for molecules, surfaces, and solids with energy decomposition analysis for extended systems
L. Pecher, R. Tonner
WIREs Comput. Mol. Sci. 9 (4), (2019), e1401
2018
Release of carriers from traps enhanced by hopping
A. V. Nenashev, V. V. Valkovskii, J. O. Oelerich, A. V. Dvurechenskii, O. Semeniuk, A. Reznik, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 98 (15) (2018), 155207
Influence of the atom source operating parameters on the structural and optical properties of InxGa1-xN nanowires grown by plasma-assisted molecular beam epitaxy
P. Hille, F. Walther, P. Klement, J. Müßener, J. Schörmann, J. Kaupe, S. Mitić, N. W. Rosemann, S. Chatterjee, A. Beyer, K. I. Gries, K. Volz, and M. Eickhoff
J. Appl. Phys. 124 (16) (2018), 165703
Interlayer excitons in transition-metal dichalcogenide heterostructures with type-II band alignment
L. Meckbach, U. Huttner, L. C. Bannow, T. Stroucken, S. W. Koch
Journal of Physics: Condensed Matter 30 (37) (2018), 374002
Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE
O. Maßmeyer, E. Sterzer, L. Nattermann, W. Stolz, K. Volz
Applied Surface Science 458 (2018), pp. 512 - 516
Field-enhanced mobility in the multiple-trapping regime
A. V. Nenashev, J. O. Oelerich, K. Jandieri, V. V. Valkovskii, O. Semeniuk, A. V. Dvurechenskii, F. Gebhard, G. Juška, A. Reznik, and S. D. Baranovskii
Phys. Rev. B 98 (3) (2018), 035201
Assignment of NEXAFS Resonances in Alkanethiols and Their Implication on the Determination of Molecular Orientation of Aliphatic SAMs
J. Völkner, M. Klues, and G. Witte
J. Phys. Chem. C 122 (29) (2018), pp. 16810 - 16820
Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM
R. Straubinger, M. Widemann, J. Belz, L. Nattermann, A. Beyer and K. Volz
Scientific Reports 8 (1) (2018), 9048
Adsorption of Methanol on Si(001): Reaction Channels and Energetics
C. Länger, T. Bohamud, J. Heep, T. Glaser, M. Reutzel, U. Höfer, and M. Dürr
J. Phys. Chem. C 122 (26) (2018), pp. 14756 - 14760
1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, and K. Volz
AIP Advances 8 (5) (2018), 055329
Synthesis of ternary group 13/15 chain compounds
M. Köster, A. Kreher and C. von Hänisch
Dalton Trans. 47 (24) (2018), pp. 7875 - 7878
Organotin Selenide Clusters and Hybrid Capsules
K. Hanau, N. Rinn, M. Argentari, and S. Dehnen
Chem. Eur. J. 24 (45) (2018), pp. 11711 - 11716
Auger losses in dilute InAsBi
J. Hader, S. C. Badescu, L. C. Bannow, J. V. Moloney, S. R. Johnson, and S. W. Koch
Appl. Phys. Lett. 112 (19) (2018), 192106
Structure and Thermal Stability of Stilbenedithiol SAMs on Au(111)
J. Völkner, A. Bashir, W. J. Parak, G. Witte
Physica Status Solidi A 215 (15) (2018), 1700859
Structural and Electronic Properties of Isovalent Boron Atoms in GaAs
C. M. Krammel, L. Nattermann, E. Sterzer, K. Volz, P. M. Koenraad
J. Appl. Phys. 123 (16) (2018), 161589
Rethinking the theoretical description of photoluminescence in compound semiconductors
V. Valkovskii, K. Jandieri, F. Gebhard, and S. D. Baranovskii
J. Appl. Phys. 123 (5) (2018), 055703
Extended band anti-crossing model for dilute bismides
J. Hader, S. C. Badescu, L. C. Bannow, J. V. Moloney, S. R. Johnson, and S. W. Koch
Appl. Phys. Lett. 112 (6) (2018), 062103
Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
P. Rosenow, L. C. Bannow, E. W. Fischer, W. Stolz, K. Volz, S. W. Koch, and R. Tonner
Phys. Rev. B 97 (7) (2018), 075201
Building Chains – Three Different Pnictogen Atoms in an Entirely tert-Butyl Substituted Molecule
B. Ringler, M. Müller, C. von Hänisch
Eur. J. Inorg. Chem. 2018 (5) (2018), pp. 640 - 646
Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry
Z. L. Bushell, R. M. Joseph, L. Nattermann, P. Ludewig, K. Volz, J. L. Keddie, S. J. Sweeney
J. Appl. Phys. 123 (4) (2018), 045701
An experimental approach for real time mass spectrometric CVD gas phase investigations
L. Nattermann, O. Maßmeyer, E. Sterzer, V. Derpmann, H. Y. Chung, W. Stolz and K. Volz
Scientific Reports 8 (2018), 319
Laterally and temporally controlled intracellular staining by light‐triggered release of encapsulated fluorescent markers
K. Kantner, J. Rejman, K. V. L. Kraft, M. G. Soliman, M. V. Zyuzin, A. Escudero, P. del Pino, W. J. Parak
Chem. Eur. J. 24 (9) (2018), pp. 2098 - 2102
Low-lying excited states in crystalline perylene
T. Rangel, A. Rinn, S. Sharifzadeh, F. H. da Jornada, A. Pick, S. G. Louie, G. Witte, L. Kronik, J. B. Neaton, and S. Chatterjee
PNAS 115 (2) (2018), pp. 284 - 289
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Composition determination of multinary III/V semiconductors via STEM HAADF multislice simulations
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Impact of detuning on the performance of semiconductor disk lasers
F. Zhang, C. Möller, M. Koch, S. W. Koch, A. Rahimi‑Iman, W. Stolz
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Field dependence of hopping mobility: Lattice models against spatial disorder
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Phys. Rev. B 96 (19) (2017), 195208
Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition
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Ether auf Si(001): Ein Paradebeispiel für die Gemeinsamkeiten zwischen Oberflächenwissenschaften und organischer Molekülchemie
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Syntheses and Properties of Gold–Organotin Sulfide Clusters
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On The Effects of Column Occupancy and Static Atomic Disorder on the Analysis of Chemical Ordering in Ga(P(1-x)Bix) Compounds
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Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors
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An ab initio based approach to optical properties of semiconductor heterostructures
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Modelling and Simulation in Materials Science and Engineering 25 (6) (2017), 065001
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Scientific Reports 7 (2017), 46371
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Analytical theory for charge carrier recombination in blend organic solar cells
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STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens
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(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
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Polymer-coated nanoparticles: Carrier platforms for hydrophobic water- and air-sensitive metallo-organic compounds
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Growth, structural and electronic properties of functional semiconductors studied by first principles
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Microstructural Analysis of Perfluoropentacene Films on Graphene and Graphite: Interface-Mediated Alignment and Island Formation
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Chemoselective Reactivity of Bifunctional Cyclooctynes on Si(001)
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Tin Sulfide Clusters with Polyheteroatomic Ligands - Syntheses, Structures and Photoluminescence Properties
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MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications
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N-Heterocyclic Olefin–Carbon Dioxide and –Sulfur Dioxide Adducts: Structures and Interesting Reactivity Patterns
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{[Ir3(cod)3(μ3-S)2](μ 3-S)SnCl}2 – a ternary Ir–Sn–S cluster with the iridium atoms in three different chemical environments
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The impact of species and cell type on the nanosafety profile of iron oxide nanoparticles in neural cells
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Novel nitrogen/gallium precursor [Ga(bdma)H2] for MOVPE
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Surface Chemistry of tert-Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth
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Simple Access to Ionic Liquids and Organic Salts containing the Phosphaethynolate (PCO−) and Zintl (Sb113−) Anions
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Patterned Growth of Organic Semiconductors: Selective Nucleation of Perylene on Self-Assembled Monolayers
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Cellular uptake and bioactivity of antibody-gold nanoparticle bioconjugates
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Main Group Metal–Actinide Magnetic Coupling and Structural Response Upon U4+ Inclusion Into Bi, Tl/Bi, or Pb/Bi Cages
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Why the apparent order of bimolecular recombination in blend organic solar cells can be larger than two: A topological consideration
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Mode-locked semiconductor disk lasers
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Binary and Ternary Intermetalloid Clusters
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Optical gain in GaAsBi/GaAs quantum well diode lasers
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Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging
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Mercurates from a Revised Ionothermal Synthesis Route: The Pseudo-Flux Approach
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A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode
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Etching of Crystalline ZnO Surfaces upon Phosphonic-Acid Adsorption: Guidelines for the Realization of Well-Engineered Functional Self-Assembled Monolayers
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Energy Dependent Sticking Coefficients of Trimethylamine on Si(001) - Influence of the Datively Bonded Intermediate State on the Adsorption Dynamics
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Homogeneous Protein Analysis by Magnetic Core–Shell Nanorod Probes
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Halide Free Synthesis of Hydrochalcogenide Ionic Liquids Cat[HE] (E = S, Se, Te)
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Novel Stibano Amines: Synthesis and Reactivity towards Group 13 Element Organics
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Direct Investigation of (Sub-) Surface Preparation Artifacts in GaAs-based materials by FIB Sectioning
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Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates
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The Thermal Resistance of High-Power Semiconductor Disk Lasers
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A. Hofacker, J. O. Oelerich, A. V. Nenashev, F. Gebhard, and S. D. Baranovskii
J. Appl. Phys. 115 (22) (2014), 223713
Efficiency of exciton dissociation at internal organic interfaces beyond harmonic approximation
M. Wiemer, M. Koch, U. Lemmer, A. B. Pevtsov, S. D. Baranovskii
Organic Electronics 15 (10) (2014), pp. 2461 - 2467
Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping
J. Appl. Phys. 116 (8) (2014), 083710
2013
Terahertz-induced effects on excitons in magnetic field
C. N. Böttge, B. Breddermann, L. Schneebeli, M. Kira, S. W. Koch, J. Bhattacharyya, H. Schneider and M. Helm
physica status solidi (c) 10 (9) (2013), pp. 1218 - 1221
Holes in germanium quantum wells: spin relaxation and temperature dynamics
K. Kolata, N. S. Köster, R. Woscholski, S. Imhof, A. Thränhardt, C. Lange, J. E. Sipe, F. Pezzoli, S. Cecchi, D. Chrastina, G. Isella and S. Chatterjee
physica status solidi (c) 10 (9) (2013), pp. 1238 - 1241
Polymer-Coated Nanoparticles Interacting with Proteins and Cells: Focusing on the Sign of the Net Charge
D. Hühn, K. Kantner, C. Geidel, S. Brandholt, I. De Cock, S. J. H. Soenen, P. Rivera-Gil, J.‑M. Montenegro, K. Braeckmans, K. Müllen, G. U. Nienhaus, M. Klapper, and W. J. Parak
ACS Nano 7 (4) (2013), pp. 3253 - 3263
Evolution of multi-mode operation in vertical-external-cavity surface-emitting lasers
M. Wichmann, M. K. Shakfa, F. Zhang, B. Heinen, M. Scheller, A. Rahimi-Iman, W. Stolz, J. V. Moloney, S. W. Koch, and M. Koch
Optics Express 21 (26) (2013), pp. 31940 - 31950
In-situ spectroscopy of high power vertical-external-cavity surface-emitting lasers
A. Chernikov, M. Wichmann, J. Herrmann, B. Heinen, M. K. Shakfa, S. Chatterjee, S. W. Koch, B. Kunert, W. Stolz, T.-L. Wang, Y. Kaneda, M. Scheller, M. J. Yarborough, J. Hader, J. V. Moloney and M. Koch
phys. status solidi (b) 250 (9) (2013), pp. 1781 - 1784
Temperature: The "Ignored" Factor at the NanoBio Interface
M. Mahmoudi, A. M. Abdelmonem, S. Behzadi, J. H. Clement, S. Dutz, M. R. Ejtehadi, R. Hartmann, K. Kantner, U. Linne, P. Maffre, S. Metzler, M. K. Moghadam, C. Pfeiffer, M. Rezaei, P. Ruiz-Lozano, V. Serpooshan, M. A. Shokrgozar, G. U. Nienhaus, W. J. Parak
ACS Nano 7 (8) (2013), pp. 6555 - 6562
Multiplexed Sensing and Imaging with Colloidal Nano- and Microparticles
S. Carregal-Romero, E. Caballero-Díaz, L. Beqa, A. M. Abdelmonem, M. Ochs, D. Hühn, B. S. Suau, M. Valcarcel, W. J. Parak
Annual Review of Analytical Chemistry 6 (2013), pp. 53 - 81
Bridge over troubled waters: understanding the synthetic and biological identities of engineered nanomaterials
B. Fadeel, N. Feliu, C. Vogt, A. M. Abdelmonem and W. J. Parak
WIREs Nanomed Nanobiotechnol 5 (2) (2013), pp. 111 - 129
MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
P. Ludewig, N. Knaub, W. Stolz, K. Volz
Journal of Crystal Growth 370 (2013), pp. 186 - 190
From Molecules to Thin Films: GaP Nucleation on Si Substrates
A. Stegmüller, R. Tonner
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Controlling the polarization dynamics by strong THz fields in photoexcited germanium quantum wells
N. S. Köster, A. C. Klettke, B. Ewers, R. Woscholski, S. Cecchi, D. Chrastina, G. Isella, M. Kira, S. W. Koch and S. Chatterjee
New J. Phys. 15 (2013), 075004
Terahertz-induced exciton signatures in semiconductors
C. N. Böttge, S. W. Koch, L. Schneebeli, B. Breddermann, A. C. Klettke, M. Kira, B. Ewers, N. S. Köster and S. Chatterjee
physica status solidi (b) 250 (9) (2013), pp. 1768 - 1772
Observation of Forbidden Exciton Transitions Mediated by Coulomb Interactions in Photoexcited Semiconductor Quantum Wells
W. D. Rice, J. Kono, S. Zybell, S. Winnerl, J. Bhattacharyya, H. Schneider, M. Helm, B. Ewers, A. Chernikov, M. Koch, S. Chatterjee, G. Khitrova, H. M. Gibbs, L. Schneebeli, B. Breddermann, M. Kira, and S. W. Koch
Phys. Rev. Lett. 110 (2013), 137404
Real-space adsorption studies of cyclooctyne on Si(0 0 1)
G. Mette, M. Dürr, R. Bartholomäus, U. Koert, U. Höfer
Chemical Physics Letters 556 (2013), pp. 70 - 76
Hydrogen diffusion on silicon surfaces
M. Dürr, U. Höfer
Progress in Surface Science 88 (1) (2013), pp. 61 - 101
Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, W. Heimbrodt
Journal of Luminescence 133 (2013), pp. 125 - 128
Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate
K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, N. Koukourakis, N. C. Gerhardt, and M. R. Hofmann
Phys. Rev. B 87 (3) (2013), 035303
Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts
T. Grieb, K. Müller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, A. Rosenauer
Ultramicroscopy 129 (2013), pp. 1 - 9
Unusual 14-Electron Fragments [Pd(η3-Bi3−xPbx)](x+1)− as Pseudo Lead Atoms in closo-[Pd@Pd2Pb10Bi6]4−
R. Ababei, W. Massa, K. Harms, X. Xie, F. Weigend and S. Dehnen
Angew. Chem. Int. Ed. 52 (51) (2013), pp. 13544 - 13548
Ungewöhnliche 14‐Elektronen‐Fragmente [Pd(η3-Bi3−xPbx)](x+1)− als Pseudo‐Bleiatome in closo‐[Pd@Pd2Pb10Bi6]4−
R. Ababei, W. Massa, K. Harms, X. Xie, F. Weigend and S. Dehnen
Angew. Chem. 125 (51) (2013), pp. 13786 - 13790
Photoelectrochemical sensor based on quantum dots and sarcosine oxidase
M. Riedel, G. Göbel, A. M. Abdelmonem, W. J. Parak, Fred Lisdat
ChemPhysChem 14 (10) (2013), pp. 2338 - 2342
Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells
N. W. Rosemann, B. Metzger, B. Kunert, K. Volz, W. Stolz, and S. Chatterjee
Applied Physics Letters 103 (25) (2013), 252105
Room temperature excitonic recombination in GaInN/GaN quantum wells
T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch and A. Hangleiter
Applied Physics Letters 103 (20) (2013), 202106
Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
P. Ludewig, N. Knaub, N. Hossein, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, and K. Volz
Applied Physics Letters 102 (24) (2013), 242115
Quantum-Dot-Based Photoelectrochemical Sensors for Chemical and Biological Detection
Z. Yue, F. Lisdat, W. J. Parak, S. G. Hickey, L. Tu, N. Sabir, D. Dorfs, and N. C. Bigall
ACS Appl. Mater. Interfaces 5 (8) (2013), pp. 2800 - 2814
Functionalized Organotin-Chalcogenide Complexes That Exhibit Defect Heterocubane Scaffolds: Formation, Synthesis, and Characterization
J. P. Eußner, B. E. K. Barth, E. Leusmann, Z. You, N. Rinn, S. Dehnen
Chem. Eur. J. 19 (41) (2013), pp. 13792 - 13802
Towards the installation of transition metal ions on donor ligand decorated tin sulfide clusters
B. E. K. Barth, E. Leusmann, K. Harms and S. Dehnen
Chem. Commun. 49 (59) (2013), pp. 6590 - 6592
Changes in the Structural Dimensionality of Selenidostannates in Ionic Liquids: Formation, Structures, Stability, and Photoconductivity
Y. Lin, D. Xie, W. Massa, L. Mayrhofer, S. Lippert, B. Ewers, A. Chernikov, M. Koch, and S. Dehnen
Chem. Eur. J. 19 (27) (2013), pp. 8806 - 8813
In(SAr)3 As a Building Block for 3D and Helical Coordination Polymers
J. Heine, M. Holyńska, M. Reuter, B. Haas, S. Chatterjee, M. Koch, K. I. Gries, K. Volz, S. Dehnen
Crystal Growth & Design 13 (3) (2013), pp. 1252 - 1259
Syntheses, Structures, and Electronic Properties of a New Series of Tellurides of the Type [Sequestered Cation]2(Tex) (x = 1–4)
G. Thiele, N. Lichtenberger, R. Tonner, and S. Dehnen
Z. anorg. allg. Chem. 639 (15) ( 2013) , pp. 2809 - 2815
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
M. K. Shakfa, D. Kalincev, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, A. Chernikov, S. Chatterjee and M. Koch
Journal of Applied Physics 114 (16) (2013), 164306
Luminescence and energy transfer processes in ensembles and single Mn or Tb doped ZnS nanowires
U. Kaiser, S. Gies, S. Geburt, F. Riedel, C. Ronning, and W. Heimbrodt
Journal of Applied Physics 113 (7) (2013), 073506
Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors
A. V. Nenashev, F. Jansson, M. Wiemer, S. Petznick, P. J. Klar, M. Hetterich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii
Physical Review B 88 (11) (2013), 115210
Advanced percolation solution for hopping conductivity
A. V. Nenashev, F. Jansson, J. O. Oelerich, D. Huemmer, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii
Physical Review B 87 (23) (2013), 235204
2012
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations
K. Kolata, N. S. Köster, A. Chernikov, M. J. Drexler, E. Gatti, S. Cecchi, D. Chrastina, G. Isella, M. Guzzi, and S. Chatterjee
Phys. Rev. B 86 (20) (2012), 201303 (R)
Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures
K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee, W. Heimbrodt, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 86 (12) (2012), 125318