A. V. Nenashev, S. D. Baranovskii, F. Gebhard, “A derivation of E = mc^2 without electrodynamics”, Eur. J. Phys. 45, 065603 (2024). Eur. J. Phys. text
S. D. Baranovskii, A. V. Nenashev, D. Hertel, K. Meerholz, F. Gebhard, “Parametrization of the Charge-Carrier Mobility in Organic Disordered Semiconductors.”, Phys. Rev. Appl. 22, 014019 (2024).Phys. Rev. Appl. text
A. V. Nenashev, F. Gebhard, K. Meerholz, S. D. Baranovskii, “Computation of the spatial distribution of charge-carrier density in disordered media”, Entropy 26, 356 (2024).Entropy text
Alexey V. Nenashev, Florian Gebhard, Klaus Meerholz, Sergei D. Baranovskii, “Qubits, entangled states, and quantum gates realized on a set of classical pendulums”, arXiv:2312.00631v1 (2023).arXiv text
Alexey V. Nenashev, Florian Gebhard, Klaus Meerholz, Sergei D. Baranovskii, “Computation of the spatial distribution of charge-carrier density in disordered media”, arXiv:2312.13022v1 (2023).arXiv text
S. D. Baranovskii, A. V. Nenashev, D. Hertel, K. Meerholz, F. Gebhard, “Parametrization of the Charge-Carrier Mobility in Organic Disordered Semiconductors. APAE against EGDM”, arXiv:2311.05406v1 (2023).arXiv text
A. V. Nenashev, S. D. Baranovskii, F. Gebhard, “A pedestrian approach to Einstein's formula E = mc^2 with an application to photon dynamics”, arXiv:2308.02612v1 (2023).arXiv text
A. V. Nenashev and S. D. Baranovskii, “How to detect the spacetime curvature without rulers and clocks.
II. Three-dimensional spacetime”, arXiv:2312.03487v1 (2023).arXiv text
A. V. Nenashev and S. D. Baranovskii, “How to detect the spacetime curvature without rulers and clocks”, arXiv:2302.12209v1 (2023).arXiv text
A. V. Nenashev, S. D. Baranovskii, K. Meerholz, and F. Gebhard, “Quantum states in disordered media. II. Spatial charge carrier distribution”, Phys. Rev. B 107, 064207 (2023).Phys. Rev. B text
F. Gebhard, A. V. Nenashev, K. Meerholz, and S. D. Baranovskii, “Quantum states in disordered media. I. Low-pass filter approach”, Phys. Rev. B 107, 064206 (2023).Phys. Rev. B text
S. D. Baranovskii, A. V. Nenashev, D. Hertel, F. Gebhard, K. Meerholz, “Mini-review: Energy scales of compositional disorder in alloy semiconductors”, ACS Omega 7, 45741 |(2022). ACS Omega text
S. D. Baranovskii, P. Höhbusch, A. V. Nenashev, A. V. Dvurechenskii, M. Gerhard, D. Hertel, K. Meerholz, M. Koch F. Gebhard , “Comment on “Interplay of Structural and Optoelectronic Properties in Formamidinium Mixed Tin–Lead Triiodide Perovskites””, Adv. Funct. Mater. 2201309 |(2022). Adv. Funct. Mater. text
B. V. Senkovskiy, A. V. Nenashev, S. K. Alavi, Y. Falke1, M. Hell1,
P. Bampoulis, D. V. Rybkovskiy, D. Yu. Usachov, A. V. Fedorov,
A. I. Chernov, F. Gebhard, K. Meerholz, D. Hertel, M. Arita,
T. Okuda, K. Miyamoto, K. Shimada, F. R. Fischer, T. Michely,
S. D. Baranovskii, K. Lindfors, T. Szkopek, and A. Grüneis, “Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions”, Nature Commun. 12:2542 |(2021). Nature Comm. text
H. Masenda, L. M. Schneider, M. A. Aly, S. J. Machchhar, A. Usman, K. Meerholz, F. Gebhard, S. D. Baranovskii, and M. Koch, “Energy Scaling of Compositional Disorder in Ternary Transition-Metal Dichalcogenide Monolayers”, Adv. Electron. Mater. 2100196 (2021). Adv. Electron. Mater. text
Y. Lee, S. Yung, A. Plews, A. Nejim , O. Simonetti, L. Giraudet, S. D. Baranovskii, F. Gebhard, K. Meerholz, S. Jung, G. Horowitz, and Y. Bonnassieux, “Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors” Phys. Rev. Appl. 15, 024021 (2021). PRAppl text
S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich, S.H.M. Greiner, A. V. Dvurechenskii, and F. Gebhard, "Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors", Europhys. Lett. 127, 57004 (2019). EPL text
A. V. Nenashev, J. O. Oelerich, S.H.M. Greiner, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Percolation description of charge transport in amorphous oxide semiconductors", Phys. Rev. B 100, 125202 (2019). PRB text
A. V. Nenashev, V. V. Valkovskii, J. O. Oelerich, A. V. Dvurechenskii, O. Semeniuk, A. Reznik, F. Gebhard, and S. D. Baranovskii, "Release of carriers from traps enhanced by hopping", Phys. Rev. B 98, 155207 (2018). PRB text
Review Article: S. D. Baranovskii, "Mott Lecture: Description of Charge Transport in Disordered Organic Semiconductors: Analytical Theories and Computer Simulations", Phys. Stat. Solidi A 215, 1700676 (2018). pss(a) text
A. V. Nenashev, J. O. Oelerich, K. Jandieri, V.V. Valkovskii, O. Semeniuk, A. V. Dvurechenskii, F. Gebhard, G. Juska, A. Reznik, and S. D. Baranovskii, "Field-enhanced mobility in the multiple-trapping regime", Phys. Rev. B 98, 035201 (2018). PRB text
V. Valkovskii, K. Jandieri, F. Gebhard, S. D. Baranovskii, "Rethinking the theoretical description of photoluminescence in compound semiconductors", J. Appl. Phys. 123, 055703 (2018). JAP text
J. O. Oelerich, A. V. Nenashev, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Field dependence of hopping mobility: Lattice models against spatial disorder", Phys. Rev. B 96, 195208 (2017). PRB text
A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors ", Phys. Rev. B 96, 035204 (2017). PRB text
A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, L.V. Kulik, A.B. Pevtsov, F. Gebhard, M. Koch, and S. D. Baranovskii, "Analytical theory for charge carrier recombination in blend organic solar cells", Phys. Rev. B 95, 104207 (2017). PRB text
J. O. Oelerich, L. Duschek, J. Belz, A. Beyer, S. D. Baranovskii, K. Volz, "STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimen", Ultramicroscopy 177, 91 (2017). Umicr text
V. Valkovskii, M. K. Shakfa, K. Jandieri, P. Ludewig, K. Volz, W. Stolz, M. Koch, S. D. Baranovskii, "Excitation dependence of the photoluminescence lineshape in Ga(NAsP)/GaP multiple quantum well: Experiment and Monte-Carlo simulation", J. Phys. D: Appl. Phys. 50, 025105 (2017). J. Phys. D text
O. Semeniuk, G. Juska, J. O. Oelerich, M. Wiemer, S.D. Baranovskii, A. Reznik, "Transport of electrons in Lead Oxide studied by CELIV technique", J. Phys. D: Appl. Phys. 50, 035103 (2017). J. Phys. D text
M. Wiemer, K. Jandieri, M. Koch, F. Gebhard, S. D. Baranovskii, "Band edge smearing due to compositional disorder in multi-component d-dimensional alloys", Phys. Stat. Solidi (b) - Rapid Research Letters (RRL), 10, 911 (2016). RRL text
O. Semeniuk, G. Juska, J.-O. Oelerich, M. Wiemer, S.D. Baranovskii, A. Reznik "Charge transport mechanism in lead oxide revealed by CELIV technique", Scientific Reports 6, 33359 (2016). Sci. Rep. text
A. V. Nenashev, M. Wiemer, M. Koch, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Disorder-induced absorption of far-infrared waves by acoustic modes in nematic liquid crystals", J. Appl. Phys. 120, 074901 (2016). JAP text
A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, F. Gebhard, M. Koch, and S. D. Baranovskii, "Why the apparent order of bimolecular recombination in blend organic solar cells can be larger than two: a topological consideration", Appl. Phys. Lett. 109, 033301 (2016). APL text
A. Beyer, A. Stegmüller, J.- O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, S. D. Baranovskii, R. Tonner, and K. Volz "Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon", Chem. Mater. 28, 3265 (2016). Chem. Mater. text
O. Bubon, K. Jandieri, S. D. Baranovskii, S. O. Kasap, and A. Reznik "Columnar recombination for X-ray generated electron-holes in amorphous selenium and its significance in a-Se x-ray detectors" , J. Appl. Phys. 119, 124511 (2016). JAP text
R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, and M. Koch "Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures", J. Appl. Phys. 119, 145707 (2016). JAP text
M. K. Shakfa, R. Woscholski, S. Gies, T. Wegele, M. Wiemer, P. Ludewig, K. Jandieri, S.D. Baranovskii, W. Stolz, K. Volz, W. Heimbrodt, M. Koch "Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness", Superlattices and Microstruct. 93, 67 (2016). Super. Micr. text
R. Woscholski, M. K. Shakfa, S. Gies, M. Wiemer, A. Rahimi-Iman, M. Zimprich, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch, "Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: effects of rapid thermal annealing", Thin Solid Films 613, 55 (2016). Th.Sol.Films text
M K Shakfa, K Jandieri, M Wiemer, P Ludewig, K Volz, W Stolz, S D Baranovskii and M Koch, "Energy scale of compositional disorder in Ga(AsBi)", J. Phys. D: Appl. Phys. 48, 425101 (2015). J. Phys. D text
K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, S. W. Koch, K. Volz, and W. Stolz, "Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures", J. Appl. Phys. 118, 065701 (2015). JAP text
A. V. Nenashev, F. Jansson, S. Petznick, M. Wiemer, P.J. Klar, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Scaling description of positive magnetoresistivity in doped dilute magnetic semiconductors", J. Magn. Magn. Mater. 383, 44 (2015). JMMM text
Review Article: A. V. Nenashev, J. O. Oelerich, and S. D. Baranovskii, "Theoretical tools for description of charge transport in disordered organic semiconductors", J. Phys.: Condens Matter 27, 093201 (2015). J. Phys. text
M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii, and M. Koch, "Thermal quenching of photoluminescence in Ga(AsBi)", J. Appl. Phys. 117, 025709 (2015). JAP text
M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch "Two-energy-scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)" phys. stat. sol. (c) 12, 1187 (2015). pss(c) text
K. Werner, A. Beyer, J. O. Oelerich, S. D. Baranovskii, W. Stolz, K. Voltz, "Structural Characteristics of Gallium Metal Deposited on Si (0,0,1) by MOCVD", J. Cryst. Growth 405, 102 (2014). J. Cryst. Gr. text
F. Jansson, M. Wiemer, A. V. Nenashev, S. Petznick, P.J. Klar, M. Hetterich, F. Gebhard, and S. D. Baranovskii, "Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping", J. Appl. Phys. 116, 083710 (2014). JAP text
M. Wiemer, M. Koch, U. Lemmer, A. B. Pevtsov, S. D. Baranovskii, "Efficiency of exciton dissociation at internal organic interfaces beyond harmonic approximation", Org. Electronics 15, 2461 (2014). Org. Electr. text
A. Hofacker, J. O. Oelerich, A. V. Nenashev, F. Gebhard and S. D. Baranovskii, "Theory to carrier recombination in organic disordered semiconductors", J. Appl. Phys. 115, 223713 (2014). JAP text
J. O. Oelerich, F. Jansson, A. V. Nenashev, F. Gebhard, and S. D. Baranovskii, "Energy position of the transport path in disordered organic semiconductors", J. Phys.: Condens Matter 26, 255801 (2014). J. Phys. text
Review Article: S. D. Baranovskii, "Theoretical description of charge transport in disordered organic semiconductors", Phys. Stat. Sol. B, 251, 487-525 (2014). pss(b) text
A. V. Nenashev, F. Jansson, M. Wiemer, S. Petznick, P. J. Klar, M. Hetterich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors", Phys. Rev. B 88, 115210 (2013). PRB text
A. V. Nenashev, F. Jansson, J. O. Oelerich, D. Huemmer, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Advanced percolation solution for hopping conductivity", Phys. Rev. B 87, 235204 (2013). PRB text
K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, and S. D. Baranovskii, N. Koukourakis, N. C. Gerhardt, and M. R. Hofmann, "Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate", Phys. Rev. B, 87, 035303 (2013). PRB text
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard,, S.D. Baranovskii, W. Heimbrodt, "Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells", J. Lumin. 133, 125 (2013).
J. O. Oelerich, D. Huemmer, and S. D. Baranovskii, "How to Find Out the DOS in Disordered Organic Semiconductors", Phys. Rev. Lett. 108, 226403 (2012). PRL text
K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee,W. Heimbrodt, F. Gebhard, and S. D. Baranovskii, "Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures", Phys. Rev. B 86, 125318 (2012). PRB text
Review Article: S. D. Baranovskii, M. Wiemer, A. V. Nenashev, F. Jansson, and F. Gebhard, "Calculating the Efficiency of Exciton Dissociation at the Interface between a Conjugated Polymer and an Electron Acceptor", J. Phys. Chem. Lett. (Perspectives) 3, 1214 (2012). J. Phys. Chem. Lett. text
A. Reznik, K. Jandieri, F. Gebhard, S. D. Baranovskii , "Non-Onsager mechanism of longwave photogeneration in amorphous selenium at high electric fields", Appl.Phys. Lett. 100, 132101 (2012). APL text
A. V. Nenashev, M. Wiemer , F. Jansson, S. D. Baranovskii, "Theory to exciton dissociation at the interface between a conjugated polymer and an electron acceptor", J. Non-Cryst. Solids 358, 2508 (2012). JNCS text
K. Jandieri, S. D. Baranovskii, B. Kunert, M. Zimprich, S. Liebich, K. Volz, W. Stolz, S. Chatterjee, C. Karcher, W. Heimbrodt and F. Gebhard, "Compositional disorder anomalies in Ga(N,P,As)/GaP quantum well structures", J. Phys.: Conference Series 376, 012021 (2012). J. Phys. text /li>
A. V. Nenashev, D. Baranovskii, M. Wiemer, F. Jansson, R. Oesterbacka, A. V. Dvurechenskii, and F. Gebhard, "Theory of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Phys. Rev. B 84, 035210 (2011). PRB text
M. Wiemer , A. V. Nenashev , F. Jansson, S. D. Baranovskii, "On the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Appl. Phys. Lett. 99, 013302 (2011). APL text
K. Jandieri, C. Jurecka, J. Ohlmann, A. Beyer, B. Kunert, S. D. Baranovskii, K. Volz, W. Stolz, and F. Gebhard, "Hopping relaxation of photoexcited excitons in Ga(NAsP) bulk structure", Phys. Stat. Sol. (c) 8, 163 (2011). pss(c) text
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt, "Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures", Phys. Rev. B 82, 245309 (2010). PRB text
J. O. Oelerich, D. Huemmer, M. Weseloh, and S. D. Baranovskii, "Concentration dependence of the transport energy level for charge carriers in organic semiconductors", Appl.Phys. Lett. 97, 143302 (2010). APL text
A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Role of Diffusion in Two-dimensional Bimolecular Recombination", Appl.Phys. Lett. 96, 213304 (2010). APL text
A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Effect of electric field on diffusion in disordered materials. I. One-dimensional hopping transport", Phys. Rev. B 81, 115203 (2010). PRB text
A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Effect of electric field on diffusion in disordered materials. II. Two- and three-dimensional hopping transport", Phys. Rev. B 81, 115204 (2010). PRB text
F. Jansson, A.V. Nenashev, S. D. Baranovskii, R. Österbacka, F. Gebhard, "Negative differential conductivity in the hopping transport model", Phys. Stat. Sol. (A) 207, 613 (2010). pss(a) text
O.Rubel and S. D. Baranovskii, "Formation energies of antiphase boundaries in GaAs and GaP: ab initio study", Int. J. Mol. Sci. 10, 5104 (2009). IJMC text
F. Jansson, A.V. Nenashev, S. D. Baranovskii, R. Österbacka, F. Gebhard, "Simulations of hopping transport at high electric fields", Ann. Phys. 18, 856 (2009). Ann. Phys. text
C. Michel, A. Gliesche, S. D. Baranovskii, K. Lips, F. Gebhard and C. Boehme, "Influence of disorder on the spin-dependent transition rates through spin pairs under strong coherent excitation", Phys. Rev. B 79, 052201 (2009). PRB text
K Jandieri, S D Baranovskii, W Stolz, F Gebhard, W Guter, M Hermle, and A W Bett, "Fluctuations of the peak current of tunnel diodes in multi-junction solar cells", J. Phys. D: Appl. Phys. 42, 155101 (2009). J. Phys. D text
K. Jandieri, O. Rubel, S.D. Baranovskii, A.Reznik, J.A.Rowlands and S.O.Kasap, "Lucky-drift model for impact ionization in amorphous semiconductors", J. Mater Sci: Mater Electron. 20, S221 (2009). J. Mater Sci text
A. Reznik, S.D. Baranovskii, M. Klebanov, V. Lyubin, O. Rubel, and J. A. Rowlands, "Reversible vs Irreversible Photodarkening in a-Se: the Kinetics Study", J. Mater Sci: Mater Electron. 20, S111 (2009). J. Mater Sci text
Book Chapter: S.D. Baranovskii, O. Rubel, F. Jansson, R. Österbacka, "Description of Charge Transport in Disordered Organic Materials", in "Advances in Polymer Science", eds. G. Meller, T. Grasser, (Springer, Berlin, Heidelberg, 2010).
O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard, "Exact solution for hopping dissociation of germinate electron-hole pairs in a disordered chain", Phys. Rev. Lett. 100, 196602 (2008). PRL text
Robert E. Tallman, A. Reznik, B. A. Weinstein, S. D. Baranovskii, J.A. Rowlands, "Similarities in the kinetics of photo-crystallization and photo-darkening in a-Se", Appl. Phys. Lett. 93, 212103 (2008). APL text
A.V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A.V. Dvurechenskii, and F. Gebhard, "Hopping conduction in strong electric fields: Negative dfferential conductivity", Phys. Rev. B 78, 165207 (2008). PRB text
F. Jansson, S. D. Baranovskii, F. Gebhard, and R. Österbacka, "Effective temperature for hopping transport in a Gaussian DOS", Phys. Rev. B 77, 195211 (2008). PRB text
C. Michel, M. T. Elm, B. Goldlücke, S. D. Baranovskii, P. Thomas, W. Heimbrodt, and P. J. Klar, "Tailoring the magnetoresistance of MnAs/GaAs:Mn granular hybrid nanostructures", Appl. Phys. Lett. 92, 223119 (2008). APL text
A. Gliesche, C. Michel, V. Rajevac, K. Lips, S.D. Baranovskii, F. Gebhard and C. Boehme, "Spin-dependent transition rates through exchange coupled localized spin pairs during coherent spin excitation", Phys. Rev. B 77, 245206 (2008). PRB text
K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett, "Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes", Appl. Phys. Lett. 92, 243504 (2008). APL text
Edited Book: "Transport in Interacting Disordered Systems, 12th International Conference (TIDS12)", edited by Sergei Baranovski (Guest Editor, Wiley-VCH, Berlin, Germany, 2008).
K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett "Resonant electron tunneling through defects in tunnel diodes", J. Appl. Phys. 104, 094506 (2008). JAP text
K. Jandieri, S.D. Baranovskii, W. Stolz, and F. Gebhard "Analytical theory for favorable defects in tunnel diodes", J. Appl. Phys. 104, 114511 (2008). JAP text
R. Lukacs, S. D. Baranovskii, P. Thomas, F. Gebhard "To the Kinetics of Photoinduced Volume Changes in Chalcogenide Glasses", J. Appl. Phys. 103, 093541 (2008). JAP text
A. Reznik, S.D. Baranovskii, O. Rubel, K. Jandieri, S.O. Kasap, Y.Ohkawa, M. Kubota, K. Tanioka and J. A. Rowlands "Avalanche multiplication in amorphous selenium and its utilization in imaging", J. Non-Cryst. Solids 354, 2691 (2008). JNCS text
K. Jandieri, O. Rubel, S.D. Baranovskii, A. Reznik, J.A. Rowlands, S.O. Kasap "Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors", J. Non-Cryst. Solids 354, 2657 (2008). JNCS text
T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar and J. F. Geisz "Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)", J. Phys.: Condens. Matter 20, 015217 (2008). J. Phys. text
J. Matulewski, S. D. Baranovskii, and P. Thomas, "On the application of the Edwards-Anderson order parameter to the Coulomb glass", phys. stat. sol. (b) 245, 481 (2008). pss(b) text
C. Michel1, M. T. Elm, S. D. Baranovskii, P. Thomas, W. Heimbrodt, B. Goldlücke, and P. J. Klar, "Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga1-xMnxAs alloys", phys. stat. sol. (c) 5, 819 (2008). pss(c) text
K. Jandieri, O. Rubel, S. D. Baranovskii, A. Reznik, J. A. Rowlands, and S. O. Kasap, One-dimensional lucky-drift model with scattering and movement asymmetries for impact ionization in amorphous semiconductors", phys. stat. sol. (c) 5, 796 (2008). pss(c) text
A. Reznik, S. D. Baranovskii, O. Rubel, K. Jandieri, and J. A. Rowlands "Photoconductivity in amorphous selenium blocking structures", phys. stat. sol. (c) 5, 790 (2008). pss(c) text
T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar, and J. F. Geisz, "Hopping energy relaxation of localized excitons in GaP(N)" phys. stat. sol. (c) 5, 768 (2008). pss(c) text
F. Jansson, S. D. Baranovskii, G. Sliauzys, R. Österbacka, and P. Thomas "Effective temperature for hopping transport in a Gaussian DOS" phys. stat. sol. (c) 5, 722 (2008). pss(c) text
J. Matulewski, S. Orlowski, S. D. Baranovskii, and P. Thomas "The influence of the water surrounding on a long-distance electron transport in the DNA", phys. stat. sol. (c) 5, 714 (2008). pss(c) text
J. Matulewski1, S. D. Baranovskii, and P. Thomas "Simulation of the Coulomb gap evolution in the Coulomb glass" phys. stat. sol. (c) 5, 694 (2008). pss(c) text
A. Reznik, S. D. Baranovskii, O. Rubel, G. Juska, S. O. Kasap, Y. Ohkawa, K. Tanioka, J. A. Rowlands "Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon", J. Appl. Phys. 102, 053711 (2007). JAP text
C. Michel, S. D. Baranovskii, P. Thomas, W. Heimbrodt, M. T. Elm, P. J. Klar, B. Goldlücke "Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1-xMnxAs alloys", J. Appl. Phys. 102, 073712 (2007). JAP text
O. Rubel, W. Stolz, and S. D. Baranovskii "Spectral dependence of the photoluminescence decay in disordered semiconductors", Appl. Phys. Lett. 91, 021903 (2007). APL text
Feature Article: P. Dawson, E. O. Göbel, K. Pierz, O. Rubel, S. D. Baranovskii, and P. Thomas "Relaxation and recombination in InAs quantum dots", phys. stat. sol. (b) 244, 2803 (2007). pss(b) text
O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "Kinetic effects in recombination of optical excitations in disordered quantum heterostructures", J. Lumin. 127, 285 (2007).
Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).
Book Chapter: S.D. Baranovskii and O. Rubel, “Description of Charge Transport in Disordered Materials” in "Springer Handbook of Electronic and Photonic Materials", edited by S. Kasap and P. Capper (Springer, 2006), Chap. 9, pp. 161-186.
Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in amorphous semiconductors” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 2, pp. 49-96.
Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in disordered organic materials” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 6, pp. 221-266.
V. Rajevac, Ch. Boehme, Ch. Michel, A. Gliesche, K. Lips, S.D. Baranovskii, and P. Thomas "Spin–dependent transition rates of weakly coupled localized spin pairs in semiconductors during coherent magnetic resonant excitation", Phys. Rev. B. 74, 245206 (2006). PRB text
C. Michel, S.D. Baranovskii, P. Klar, S.D. P. Thomas, B. Goldlücke "Strong non-Arrhenius temperature dependence of the resistivity in the regime of traditional band transport ", Appl. Phys. Lett. 89, 112116 (2006). APL text
O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz and W. Stolz "Modelling of annealing induced short-range order effects in (GaIn)(NP) alloys", Phys. Rev. B 74, 195206 (2006). PRB text
O. Rubel, S. D. Baranovskii, K. Hantke, B. Kuenert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "On temperature quenching of photoluminescence in disordered semiconductor heterostructures", Phys. Rev. B 73, 233201 (2006). PRB text
S.D. Baranovskii, O. Rubel, P. Thomas, "On the concentration and field dependences of the hopping mobility in disordered organic solids", J. Non-Cryst. Solids, 352, 1644 (2006). JNCS text
A. Reznik, S. D. Baranovskii, V. Lyubin et al., "Kinetics of the photostructural changes in a-Se films", J. Appl. Phys. 100, 113506 (2006). JAP text
O. Rubel, S. D. Baranovskii, K. Hantke, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "Non-radiative recombination of optical excitations in GaIn/NAs quantum wells", phys. stat. sol. (c) 3, 2481 (2006). pss(c) text
O. Rubel, P.Dawson, S. D. Baranovskii, K. Pierz, P. Thomas, and E.O. Göbel "Nature and dynamics of carrier escape from InAs/GaAs quantum dots", phys. stat. sol. (c) 3, 2397 (2006). pss(c) text
K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, W. Stolz "Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor", Appl. Phys. Lett. 88, 081910 (2006). APL text
J. Matulewski, S.D. Baranovskii, P. Thomas "Phononless hopping conductivity in a Coulomb glass ", phys. stat. sol. (c) 3, 279 (2006). pss(c) text
W. Heimbrodt, P.J. Klar, S. Ye, M. Lampalzer, C. Michel, S.D. Baranovskii, P. Thomas, W. Stolz "Magnetic Interactions in Granular Paramagnetic–Ferromagnetic GaAs: Mn/MnAs Hybrids", J. Supercond. 18 , 315 (2005). J. Supercond. text
O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy", J. Appl. Phys. 98, 063518 (2005). JAP text
P. Dawson, O. Rubel, S. D. Baranovskii, K. Pierz, P. Thomas, and E. O. Göbel, "Temperature Dependent Optical Properties of InAs/GaAs Quantum Dots: Independent Carrier versus Exciton Relaxation ", Phys. Rev. B 72, 235301 (2005).PRB text
S.D. Baranovskii, O. Rubel, P. Thomas, "On description of Coulomb effects caused by doping in amorphous and disordered organic semiconductors ", J. Optoelectronics and Advanced Materials 7, 1929 (2005).
J. Matulewski, S.D. Baranovskii, P. Thomas "Effects of dynamic disorder on the charge transport via DNA molecules ", Phys. Chem. Chem. Phys. 7, 1514 (2005). PCCP text
S.D. Baranovskii, O. Rubel, P. Thomas, "Theoretical description of hopping transport in disordered materials", Thin Solid Films 487, 2 (2005). Th.Sol.Films text
C. Michel, C.H. Thien, S. Ye, P. Klar, W. Heimbrodt, S.D. Baranovskii, P. Thomas, M. Lampalzer, K. Volz, W. Stolz, B. Goldlücke "Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic-ferromagnetic hybrids at low temperatures", Superlattices and Microstructures 37, 321 (2005). Super. Micr. text
P. Bozsoki, S.D. Baranovskii, P. Thomas, T.A. Yovcheva, G.A. Mekishev "Analytical solution of a percolation model for charge decay on surfaces", J. Optoelectronics and Advanced Materials 7, 301 (2005).
O. Rubel, S.D. Baranovskii, K. Hantke, J.D. Heber, J. Koch, P. Thomas, W. Stolz, W.W. Rühle, J.M. Marshall "On the theoretical description of photoluminescence in disordered quantum structures", J. Optoelectronics and Advanced Materials 7, 115 (2005).
O. Rubel, K. Volz, T. Torunski, S.D. Baranovskii, F. Grosse, W. Stolz "Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys", Appl. Phys. Lett. 85, 5908 (2004). APL text
S.O. Kasap, J. Rowlands, S.D. Baranovskii, and K. Tanioka "Lucky drift impact ionization in amorphous semiconductors", J. Appl. Phys. 96, 2037 (2004). JAP text
J. Matulewski, S.D. Baranovskii, P. Thomas "Base sequence dependence of charge transport via short DNA bridges ", Phys. Stat. Solidi (b) - Rapid Research Letters (RRL) 241, R46 (2004). RRL text
O. Rubel, S.D. Baranovskii, I.P. Zvyagin, P. Thomas, and S.O. Kasap "Lucky-drift model for avalanche multiplication in amorphous semiconductors", phys. stat. sol. (c) 1, 1186 (2004). pss(c) text
C. Michel, P. Klar, S.D. Baranovskii, P. Thomas " Influence of magnetic-field induced tuning of disorder and band structure on the magnetoresistance of dilute magnetic semiconductors", Phys. Rev. B 69, 165211 (2004). PRB text
B. Dal Don, K. Kohary, E. Tsitsishvili, S.D. Baranovskii, P. Thomas, and H. Kalt "Quantitative interpretation of the phonon-assisted redistribution processes of excitons in Zn(1-x)CdxSe quantum islands", Phys. Rev. B 69, 045318 (2004). PRB text
O. Rubel, S.D. Baranovskii, P. Thomas, and S. Yamasaki "Concentration dependence of the hopping mobility in disordered organic solids ", Phys. Rev. B 69, 014206 (2004). PRB text
H. Grüning, K. Kohary, S.D. Baranovskii, O. Rubel, P.J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz and W. Rühle "Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells ", phys. stat. sol. (c) 1, 109 (2004). pss(c) text
O. Rubel, S.D. Baranovskii, P. Thomas, and S. Yamasaki "Concentration dependence of the hopping mobility in disordered organic solids ", phys. stat. sol. (c) 1, 168 (2004). pss(c) text
P. Bozsoki, S.D. Baranovskii, P. Thomas, and S.C. Agarwal "Potential fluctuations in disordered semiconductors measured by transport and optical methods ", phys. stat. sol. (c) 1, 113 (2004). pss(c) text
K. Kohary, H. Cordes, S.D. Baranovskii, P. Thomas, and J.-H. Wendorff "Hopping transport in 1D chains (DNA vs. DLC)", phys. stat. sol. (b) 241, 76 (2004). pss(b) text
B. Dal Don, K. Kohary, E. Tsitsishvili, R. Eichmann, S.D. Baranovskii, P. Thomas, and H. Kalt "Temperature Dependent Excitonic Relaxation in CdSe/ZnSe Quantum Islands: Experiment and Computer Simulation", physica status solidi (c) 0, 1509 (2003). pss(c) text
S.D. Baranovskii, K. Kohary, P. Thomas and S. Yamasaki "On the Light Absorption in Amorphous Semiconductors", J. Mater. Science: Materials in Electronics 14, 707 (2003). J. Mat. Scie. text
S.D. Baranovskii, K. Kohary, P. Thomas and S. Yamasaki "On the Light Absorption in Amorphous Semiconductors" Physics and Applications of Disordered Materials, ed. M. Popescu, INOE, 2002.
S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas "Percolation Approach to Hopping Transport in Organic Disordered Solids" phys. stat. sol. (b) 230, 281 (2002). pss(b) text
H. Cordes, S.D. Baranovskii, J. Greif "Percolation Approach to Correlated Hopping Transport in a Random Energy Landscape" phys. stat. sol. (b) 230, 243 (2002). pss(b) text
I.P. Zvyagin, M.A. Ormont, S.D. Baranovskii, P. Thomas "Effect of Coulomb Interaction on the Density of States in Intentionally Disordered Superlattices" physica status solidi (b) 230, 193 (2002). pss(b) text
S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas "Electronic Transport in Disordered Organic and Inorganic semiconductors" J. Non-Cryst. Solids 299-302, 416 (2002).JNCS text
I.P. Zvyagin, S.D. Baranovskii, K. Kohary, H. Cordes and P. Thomas "Hopping in Quasi-One-Dimensional Disordered Solids: Beyond the Nearest-Neighbor Approximation" phys. stat. sol. (b) 230, 227 (2002). pss(b) text
S.D. Baranovskii, H. Cordes, K. Kohary, and P. Thomas "On the Disorder-Enhanced Diffusion in Aromatic Melts" Philos. Mag. B 81, 955 (2001). via TIB
S.A. Tarasenko, A.A. Kiselev, E.L. Ivchenko, A. Dinger, M. Baldauf, C. Klingshirn, H. Kalt, S.D. Baranovskii, R. Eichmann, and P. Thomas "Energy Relaxation of Localized Excitons at Finite Temperatures" Semicond. Sci. Technol. 16, 486 (2001). Sem. Sci. Tech. text
S.D. Baranovskii, H. Cordes, F. Hensel and S. Yamasaki "Description of Charge Carrier Transport in Disordered Organic Solids" in: "Materials for Information Technology in the New Millennium", eds. J.M. Marshall, A.G. Petrov, A. Vavrek, D. Nesheva, D. Dimova-Malinovska, J.M. Maud (Bookcraft, Bath 2001) p.206.
K. Kohary, S.D. Baranovskii, H. Cordes, P. Thomas, F. Hensel, S. Yamasaki and J.-H. Wendorff "One-Dimensional Hopping Transport in Disordered Organic Solids. II. Computer Simulations" Phys. Rev. B. 63, 094202-1 (2001). PRB text
H. Cordes, S.D. Baranovskii, K. Kohary, P. Thomas, F. Hensel, S. Yamasaki and J.-H. Wendorff "One-Dimensional Hopping Transport in Disordered Organic Solids. I. Analytic Calculations" Phys. Rev. B. 63, 094201-1 (2001). PRB text
S.D. Baranovskii, H. Cordes, F. Hensel and S. Yamasaki "On the Description of Charge Carrier Transport in Disordered Organic Solids" Synthetic Metals 119, 57 (2001). Synt. Met. text
H. Uchtmann, S.Yu. Kazitsyna, S.D. Baranovskii, and F. Hensel "Light-Induced Nucleation and Optical Absorption in Cesium Vapor" J. Chem. Phys. 113, 4171 (2000). J. Chem. Phys. text
S.D. Baranovskii, H. Cordes, S. Yamasaki and G. Weiser "On the Carrier Mean Free Path in GaxIn1-xAs Mixed Crystals" phys. stat. sol. (b) 218, R7 (2000). pss(b) text
S.D. Baranovskii, H. Cordes, F. Hensel and G. Leising "On the Description of Charge Carrier Transport in Disordered Organic Solids" Phys. Rev. B. 62, 7934 (2000). PRB text
V.I. Kozub, S.D. Baranovskii, I. Shlimak "Fluctuation-Stimulated Variable-Range Hopping" Solid State Commun. 113, 587 (2000). Sol. State. Commun. text
H. Cordes and S.D. Baranovskii "On the Conduction Mechanism in Ionic Glasses" phys. stat. sol. (b) 218,133 (2000). pss(b) text
S.D. Baranovskii and T. Faber "Transport Energy for Förster Prosesses" phys. stat. sol. (b) 218, 59 (2000). pss(b) text
S.D. Baranovskii and H. Cordes "On the Transport Mechanism in Ionic Glasses" J. Chem. Phys. 111, 7546 (1999). J. Chem. Phys. text
I. Shlimak, K.-J. Friedland, and S.D. Baranovskii "Hopping Conductivity in Gated GaAs: Universality of Prefactor" Solid State Commun. 112, 21 (1999). Sol. State. Commun. text
S.D. Baranovskii and I. Shlimak "Novel Transport Mechanism for Interacting Electrons in Disordered Systems: Variable-Range Resonant Tunneling" preprint cond.mat/9810363. Cond.Mat. text
S.D. Baranovskii, Comment on "Absence of Carrier Hopping in Porous Silicon" Phys. Rev. Lett. 81, 3804 (1998). PRL text
S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-dependent Exciton Luminescence in Quantum Wells: Computer Simulation" Proceedings of the 24th International Conference on the Physics of Semiconductors August`98, Jerusalem, Israel (World Scientific, Singapore, 1998), p.57.
S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-dependent Exciton Luminescence in Quantum Wells: Computer Simulation" Phys. Rev. B 58, 13081 (1998). PRB text
S.D. Baranovskii, V.K. Tikhomirov, G.J. Adriaenssens "Evidence for a Temperature Dependence of the Intrinsic Dipoles in Chalcogenide Glasses" Philos. Mag. Lett. 77, 295 (1998). text via TIB
S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-Dependent Exciton Luminescence in Coupled Quantum Wells" phys. stat. sol. (b) 205, R19 (1998). pss(b) text
J.-H. Zhou, S.D. Baranovskii, S. Yamasaki, K. Ikuta, K. Tanaka, M. Kondo, A. Matsuda "On the Transport Properties of Microcrystalline Silicon at Low Temperatures" Semiconductors 32, 807 (1998). Semicond. text
S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" J. Non-Cryst. Solids 227-230, 158 (1998). JNCS text
M. Zhu, S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "Thermally Stimulated Conductivity in Disordered Semiconductors in the Hopping Regime" J. Non-Cryst. Solids 227-230, 162 (1998). JNCS text
J.-H. Zhou, S.D. Baranovskii, S. Yamasaki, K. Ikuta, K. Tanaka, M. Kondo, A. Matsuda "On the Transport Properties of Microcrystalline Silicon at Low Temperatures" phys. stat. sol. (b) 205, 147 (1998). pss(b) text
S.D. Baranovskii, M. Zhu, T. Faber, F. Hensel, P. Thomas, G.J. Adriaenssens "Thermally Stimulated Conductivity in Disordered Semiconductors at Low Temperatures" phys. stat. sol. (b) 205, 91 (1998). pss(b) text
S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" phys. stat. sol. (b) 205, 87 (1998). pss(b) text
H. Uchtmann, R. Dettmer, S.D. Baranovskii, F. Hensel "Photoinduced Nucleation in Supersaturated Mercury Vapor" J. Chem. Phys. 108, 9775 (1998). J. Chem. Phys. text
J.E. Golub, S.D. Baranovskii, P. Thomas "Role of Interactions in the Energy-Loss Hopping and Recombination of Two-Dimensional Electrons and Holes" Phys. Rev. B 55, 4575 (1997). PRB text
S.D. Baranovskii, T. Faber, F. Hensel, M. Zhu "Einstein Relation for Hopping Electrons" in "Future Directions in Thin Film Science and Technology", eds. J.M.Marshall, N.Kirov, A.Vavrek, J.M.Maud (World Scientific, Singapore, 1997) p.32.
J. Golub, S.D. Baranovskii, P. Thomas "Evidence for Dipole-Dipole Hopping of GaAs Quantum Well Excitons" Phys. Rev. Lett. 78, 4261 (1997). PRL text
S.D. Baranovskii, M. Zhu, F. Hensel, P. Thomas, M.B. von der Linden, W.F. van der Weg "Thermally Stimulated Conductivity in Disordered Semiconductors at Low Temperatures" Phys. Rev. B 55, 16226 (1997). PRB text
S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Applicability of the Transport-Energy Concept to Various Disordered Materials" J. Phys.: Cond. Matter 9, 2699 (1997). J. Phys. text
G.J. Adriaenssens, S.D. Baranovskii, W. Fuhs, J. Jansen, Ö. Öktü "Light-Intensity Dependence of Excess Carrier Lifetimes" J. Non-Cryst. Solids 198-200, 271 (1996). JNCS text
S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Description of Hopping Energy Relaxation and Transport in Disordered Systems" J. Non-Cryst. Solids 198-200, 222 (1996). JNCS text
S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas, G.J. Adriaenssens "Einstein Relationship for Hopping Electrons" J. Non-Cryst. Solids 198-200, 214 (1996). JNCS text
S.D. Baranovskii and P. Thomas "Nonlinear Hopping Transport in Band Tails" J. Non-Cryst. Solids 198-200, 140 (1996). JNCS text
S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Theory of Low-Temperature Photoluminescence and Photoconductivity in Amorphous Semiconductors" "Best of Soviet Semiconductor Physics and Technology" ed. by M.Levinstein and M. Shur (World Scientific, Singapore, 1995) p.71.
S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Spectroscopic Determination of the Compensation Degree and of the Impurity Concentration in High-Purity GaAs" "Best of Soviet Semiconductor Physics and Technology" ed. by M.Levinstein and M. Shur (World Scientific, Singapore, 1995) p.439.
I Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S.D. Baranovskii, H. Vaupel, P. Thomas, R.W. van der Heijden "Temperature-Induced Smearing of the Coulomb Gap by Hopping Electrons" Phys. Rev. Lett. 75, 4764 (1995). PRL text
G.F. Hohl, S.D. Baranovskii, J.A. Becker, F. Hensel, S.A. Quaiser, M.T. Reetz "Tunneling Conduction in Co-cluster/tetraoctylammonium bromide/ poly (phenyl -p - phenylenvinylene) Nanocomposites" J. Appl. Phys. 78, 7130 (1995). JAP text
S.D. Baranovskii, R. Dettmer, F. Hensel, H. Uchtmann "On the Time Decay of the Photoinduced Condensation in Supersaturated Vapors" J. Chem. Phys. 103, 7796 (1995). J. Chem. Phys. text
B. Cleve, B. Hartenstein, S.D. Baranovskii, M. Scheidler, P. Thomas, H. Baessler "High-Field Hopping Transport in Band Tails of Disordered Semiconductors" Phys. Rev. B 51, 16705 (1995). PRB text
G.J. Adriaenssens, S.D. Baranovskii, W. Fuhs, J. Jansen, Ö. Öktü "Photoconductivity Response Time in Amorphous Semiconductors" Phys. Rev. B 51, 9661 (1995). PRB text
S.D. Baranovskii, P. Thomas, G.J. Adriaenssens "The Concept of Transport Energy and ist Application to Steady-State Photoconductivity in Amorphous Silicon" J. Non-Cryst. Solids 190, 283 (1995). JNCS text
S.D. Baranovskii, F. Hensel, K. Ruckes, P. Thomas, G.J. Adriaenssens "On the Potential Fluctuations in Amorphous Silicon" J. Non-Cryst. Solids 190, 117 (1995). JNCS text
S.Yu. Verbin, S.D. Baranovskii, R. Hellmann, K. Ruckes, S.R. Grigorev, B.V. Novikov, E.O. Goebel, P. Thomas "New Luminescence Band in II-VI Semiconductor Crystals with Treated Surfaces" Mater. Sc. Forum 182-184, 279 (1995). MSF text
S.D. Baranovskii, G.J. Adriaenssens, P. Thomas "The Concept of Transport Energy and the Steady State Photoconductivity in Amorphous Silicon" Proceedings of 8th Int. School on Cond. Matter Physics (invited lecture), Varna`94, Bulgaria, ed. J. Marshall (Research Studies Press, U.K., 1995) p.35.
S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in ZnSexTe1-x Quantum Wells" Solid State Commun. 89, 5 (1994). Sol. State. Commun. text
A. Reznitsky, S.D. Baranovskii, A. Tsekun, C. Klingshirn "Recombination of Alloy-Trapped Excitons in Ternary Solid Solutions with Common Cation Components" phys. stat. sol. (b) 184, 159 (1994). pss(b) text
S.D. Baranovskii, P. Thomas, G.J. Adriaenssens, Ö. Öktü "Photoconductivity of Doped Amorphous Semiconductors at Low Temperatures" Molecular Crystals and Liquid Crystals 252, 23 (1994). MCLC text
S.D. Baranovskii, B. Cleve, R. Hess, P. Thomas "Effective Temperature for Electrons in Band Tails" J. Non-Cryst. Solids 164-166, 437 (1993). JNCS text
P. Thomas and S.D. Baranovskii "Equilibrium and Non-Equilibrium Transport in band Tails" J. Non-Cryst. Solids 164-166, 431 (1993). JNCS text
S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in Alloy Quantum Wells" Phys. Rev. B 48, 17149 (1993). PRB text
Ö. Öktü, H. Tolunay, G.J. Adriaenssens, W. Lauwerens, S.D. Baranovskii "Electron Drift Mobility in a-Si1-xCx:H with Low Carbon Content" Philos. Mag. Lett. 68, 173 (1993). text via TIB
S.D. Baranovskii, P. Thomas, G.J. Adriaenssens, Ö. Öktü "Low-Temperature Photoconductivity of Doped Amorphous Semiconductors" Solid State Commun. 86, 549 (1993). Sol. State. Commun. text
H. Kalt, J.H. Collet, Le Si Dang, J. Cibert, S.D. Baranovskii, R. Saleh, M. Umlauff, K.P. Geyzers, M. Heuken, C. Klingshirn "Dynamics of Localized Excitons and High-Excitation Effects in II-VI Quantum Wells and Heterostructures" Physica B 191, 90 (1993). Phys. B text
S.D. Baranovskii, P. Thomas, H. Vaupel "Electron Glass Transition in a Lightly Doped Semiconductor" Proceedings of the Int. Conf. "Condensed Matter Physics and Applications", Bahrain, 1992, p.171.
S.D. Baranovskii and P. Thomas Comment on "Phase Transition of an Exciton System in GaAs Coupled Quantum Wells" and "Fermi-Dirac Distribution of Excitons in Coupled Quantum Wells" Phys. Rev. Lett. 69, 993 (1992). PRL text
U. Siegner, D. Weber, E.O. Goebel, D. Benhardt, V. Heukeroth, S.D. Baranovskii, R. Saleh, P. Thomas, H. Schwab, C. Klingshirn, V.G. Lysenko, J.M. Hvam "Optical Dephasing in Semiconductor Mixed Crystals" Phys. Rev. B 46, 4564 (1992). PRB text
S.D. Baranovskii, P. Thomas, H. Vaupel "Electron Glass Transition in a Lightly Doped Semiconductor" Philos. Mag. B 65, 685 (1992). text via TIB
S.D. Baranovskii, P. Thomas, H. Vaupel "Temperature Dependence of the Linewidth of Shallow Impurity Spectral Lines in Lightly Doped Weakly Compensated Semiconductors" J. Appl. Phys. 71, 2452 (1992). JAP text
H. Kalt, J. Collet, S.D. Baranovskii, R. Saleh, P. Thomas, Le Si Dang, J. Cibert "Optical- and Acoustic - Phonon Assisted Hopping of Localized Excitons in CdTe/ZnTe Quantum Wells" Phys. Rev. B 45, 4253 (1992). PRB text
S.D. Baranovskii, R. Saleh, P. Thomas, H. Vaupel, H. Fritzsche "Influence of Non-radiative and Non-geminate Processes on a Lifetime of Photoexcited Carriers in Amorphous Semiconductors at Low Temperatures" J. Non-Cryst. Solids 137-138, 567 (1991). JNCS text
Book Chapter: B.I. Shklovskii, E.I. Levin, H. Fritzsche, S.D. Baranovskii "Hopping Photoconductivity in Amorphous Semiconductors: Dependence on Temperature, Electric Field and Frequency" "Advances in Disordered Semiconductors, Vol.3 (Transport, Correlation and Structural Defects)" ed. H. Fritzsche (World Scientific, Singapore, 1991), pp.161-191.
S.D. Baranovskii "Theoretical Basis for Qantitative Characterization of Impurities in n-Type III-V Semiconductors by Photoelectromagnetic Spectroscopy" Appl. Surface Science 50, 218 (1990). Appl. Surf. Sci. text or via HeBIS
S.D. Baranovskii and M. Silver "The Effect of Long-Range Coulomb Potential on the Electronic Structure of Localized States in Homogeneous Intrinsic Amorphous Semiconductors" Philos. Mag. Lett. 61, 77 (1990). text via TIB
A.G. Abdukadirov, S.D. Baranovskii, S.Yu. Verbin, E.L. Ivchenko, A.Yu. Naumov, A.N. Reznitsky "Photoluminescence and Tunneling Relaxation of Localized Excitons in A2B6 Anion Solid Solutions" Sov. Phys. JETP 71, 1155 (1990). JETP text
M.E. Raikh, S.D. Baranovskii, B.I. Shklovskii "Dimensional Quantization in a-Si:H Quantum Well Structures: the Alloy Model" Phys. Rev. B 41, 7701 (1990). PRB text
A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Low-Temperature Photoluminescence and Photoconductivity in Undoped Amorphous Semiconductors" Sov. Phys. Semicond. 24, 82 (1990). FTP text
S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Computer Simulation of Carrier Energy Relaxation and Recombination in Disordered Systems with Localized Electrons" Proceedings of the 2nd Int. Conf. "Computational Physics", Amsterdam, Netherlands, 1990, p.30.
S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Spectroscopic Determination of the Compensation Degree and of the Impurity Concentration in High-Purity GaAs" Sov. Phys. Semicond. 23, 891 (1989). FTP text
S.D. Baranovskii "Temperature Dependence of the Spectral Line Shape for Photothermal Ionization of Impurities" Proceedings of 14th Sov. Conf. "Theory of Semiconductors", Donetsk, 1989, p.73.
S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Line Shape Dependence on Temperature for Photothermal Ionization of Donors in GaAs" Inst. Phys. Conf. Ser. 95, 271 (1989) (Proceedings of the 3d Int. Conf. "Shallow Impurities in Semiconductors", Linköping, Sweden, 1989).
A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Photoluminescence and Tunneling Relaxation of Carriers in Amorphous Semiconductors" Proceedings of the Int. Conf. "Non-Crystalline Semiconductors-89", Uzhgorod, USSR, 1989, p.19.
S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Electronic Transport and Recombination in Amorphous Semiconductors at Low Temperatures" Proceedings of the Int. Conf. "Non-Crystalline Semiconductors-89", Uzhgorod, USSR, 1989, p.4.
A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Tunneling Relaxation of Carriers in Amorphous Semiconductors in the Distant-Pair Regime" Proceedings of the Sov. Conf. "Amorphous Semiconductors and Insulators of the Basis of Si in Electronics", Odessa, 1989, p.10.
B.I. Shklovskii, H. Fritzsche, S.D. Baranovskii "Recombination and Photoconductivity in Amorphous Semiconductors at Low Temperatures" J. Non-Cryst. Solids 114, 325 (1989). JNCS text
B.I. Shklovskii, H. Fritzsche, S.D. Baranovskii "Electronic Transport and Recombination in Amorphous Semiconductors at Low Temperatures" Phys. Rev. Lett. 62, 2989 (1989). PRL text
S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Theory of Photoconductivity and Photoluminescence in Amorphous Semiconductors at Low Temperatures" Sov. Phys. JETP 69, 773 (1989). JETP text
S.D. Baranovskii and B.I. Shklovskii "Temperature Dependence of the Line Profile of Photothermal Ionization of Impurities in a Lightly Doped Weakly Compensated Semiconductor" Sov. Phys. Semicond. 23, 122 (1989). FTP text
E.A. deAndrada e Silva, I.C. da Cunha Lima, S.D. Baranovskii "Density of States of Lightly Doped Ga1-xAlxAs/GaAs Quantum Wells via Monte-Carlo Simulation" Proceedings of 19th Int. Conf. "Physics of Semiconductors", Warsaw, Poland 1988, p.285.
S.D. Baranovskii and B.I. Shklovskii "Two Models of Tunnel Radiative Recombination in Disordered Semiconductors" Sov. Phys. Semicond. 23, 88 (1989). FTP text
S.D. Baranovskii, B.L. Gelmont, E.A. de Andrada e Silva, I.C. da Cunha Lima "Quadrupole Line-Broadening for Hydrogen-Like Impurities in Lightly Doped Compensated Semiconductors" Sov. Phys. Semicond. 22, 1002 (1988). FTP text
S.D. Baranovskii, V.G. Karpov, B.I. Shklovskii "Non-Radiative Recombination in Non-Crystalline Semiconductors" Sov. Phys. JETP 67, 588 (1988). JETP text
S.D. Baranovskii and V.G. Karpov "Frequency Dependence of the Capacitance of Metall-Insulator Semiconductor Structures on the Basis of Non-Crystalline Semiconductors" Sov. Phys. Semicond. 21, 1280 (1987).
S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Temperature Dependence of the Lineshape of 1s->2p Photothermal Ionization of Donors in GaAs" Sov. Phys. JETP Lett. 46, 510 (1987). JETP Lett text
S.D. Baranovskii, V.G. Karpov, B.I. Shklovskii "Theory of Non-Radiative Recombination in Amorphous Semiconductors" J. Non-Cryst. Solids 97-98, 487 (1987). JNCS text
S.D. Baranovskii, E.L. Ivchenko, B.I. Shklovskii "A Novel Tunneling Recombination Regime for Photoexcited Carriers in Amorphous Semiconductors" Sov. Phys. JETP 65, 1260 (1987). JETP text
Review Article: S.D. Baranovskii and V.G. Karpov "Localized Electron States in Semiconductor Glasses" Sov. Phys. Semicond. 21, 1 (1987).
S.D. Baranovskii, B.L. Gelmont, K.D. Tsendin "Impurity Conduction in Chalcogenide Semiconductor Glasses" J. Non-Cryst. Solids 90, 417 (1987). JNCS text
S.D. Baranovskii and V.G. Karpov "Two-Channel Electron Transport in Semiconductor Glasses" Sov. Phys. Semicond. 21, 189 (1987).
S.D. Baranovskii and V.G. Karpov "Kinetics of Photoluminescence Decay in Semiconductor Glasses" Sov. Phys. Semicond. 20, 192 (1986).
S.D. Baranovskii and V.G. Karpov "Multyphonon Transitions in the Vicinity of the Mobility Edge in Chalcogenide Glasses" Proceedings of the Sov. Conf. "Vitreous Semiconductors", Leningrad, 1985, p.20.
S.D. Baranovskii "Capture Probability and Dispersive Transport in Non-Crystalline Semiconductors" Proceedings of 12th Sov. Conf. "Theory of Semiconductors", Tashkent, 1985, p.78.
S.D. Baranovskii and E.A. Lebedev "Localized States Limiting Drift Mobility in Amorphous Se Containing S, Te and As" Sov. Phys. Semicond. 19, 635 (1985).
S.D. Baranovskii and V.G. Karpov "Probability of Capture and Dispersive Transport in Non-Crystalline Semiconductors" Sov. Phys. Semicond. 19, 336 (1985).
M. Babacheva, S.D. Baranovskii, V.M. Lyubin, M.A. Tagirdzhanov, V.A. Fedorov "Influence of Photostructural Transformations in As2S3 Films on the Urbach Absorption Edge" Sov. Izv. Vuz. 7, 12 (1985).
S.D. Baranovskii and V.G. Karpov "Mechanism of Thermal Quenching of the Photoluminescence in Chalcogenide Glasses" Proceedings of International Conf. "Amorphous Semiconductors-84", Gabrovo, Bulgaria, p. 138.
M. Babacheva, S.D. Baranovskii, V.M. Lyubin, M.A. Tagirdzhanov, V.A. Fedorov "Influence of Photostructural Transformations in As2S3 Films on the Urbach Absorption Edge" Sov. Phys. Solid State 26, 1331 (1984).
S.D. Baranovskii and V.G. Karpov "Thermal Quenching of the Photoluminescence in Chalcogenide Glasses" Sov. Phys. Semicond. 18, 828 (1984).
S.D. Baranovskii, B.I. Shklovskii, A.L. Efros "Screening in a System with Localized Electrons" Sov. Phys. JETP 60, 1031 (1984).JETP text
S.D. Baranovskii, A.A. Uzakov, A.L. Efros "Thermodynamic Properties of Impurity Band Electrons" Proceedings of 11th Sov. Conf. "Theory of Semiconductors", Uzhgorod, 1983, p.45.
S.D. Baranovskii, A.A. Uzakov, A.L. Efros "Thermodynamic Properties of Impurity Band Electrons" Sov. Phys. JETP 56, 422 (1982).JETP text
S.D. Baranovskii and A.A. Uzakov "Interimpurity Absorption of Infrared Radiation in Lightly Doped Semiconductors" Sov. Phys. Semicond. 16, 1026 (1982).
S.D. Baranovskii and A.A. Uzakov "On the Theory of High-Frequency Hopping Conductivity in Lightly Doped Semiconductors" Sov. Phys. Semicond. 15, 931 (1981).
S.D. Baranovskii, A.A. Uzakov, B.I. Shklovskii, A.L. Efros "Structure of Impurity Band in Lightly Doped Semiconductors" Proceedings of 2d Sov. Conf. "Deep Levels in Semiconductors", Tashkent, 1980, p.55.
S.D. Baranovskii, Nguen van Lien, B.I. Shklovskii, A.L. Efros "Structure of the Impurity Band in Lightly Doped Semiconductors" Proceedings of 10th Sov. Conf. "Theory of Semiconductors", Novosibirsk, 1980, p.48.
S.D. Baranovskii and A.L. Efros "Spectrum of Dipole Excitations in Disordered Systems with Localized Electrons" Sov. Phys. Semicond. 14, 1323 (1980).
S.D. Baranovskii, A.L. Efros, B.I. Shklovskii "Elementary Excitations in Disordered Systems with Localized Electrons" Sov. Phys. JETP 51, 199 (1980).JETP text
S.D. Baranovskii and A.A. Uzakov "On the High-Frequency Impurity Hopping Conductivity" Solid State Commun. 36, 829 (1980). Sol. State. Commun. text
S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems: Computer Simulation" J. Phys. C: Solid State Phys. 12, 1023 (1979). J. Phys. C text
S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems: Computer Simulation" Proceedings of 9th Sov. Conf. "Theory of Semiconductors", Tbilisy, 1978, p.37.
S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems" Solid State Commun. 27, 1 (1978). Sol. State. Commun. text
S.D. Baranovskii and A.L. Efros "Band Edge Smearing in Solid Solutions" Sov. Phys. Semicond. 12, 1328 (1978).