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Nanoschichtstrukturen zur Funktionalisierung von Silizium
Workshop RTG "Functionalization of Semiconductors"
Veranstaltungsdaten
10. January 2018 14:00
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WZMW, Hans-Meerwein-Str. 6 (Lahnberge), seminar room 02D36
| Date | Presenter | Topic |
| 14:00 | Welcome and overview | |
| 14:05 | P. Ludewig | MOVPE studies of Ga(NAs(Sb))-MQWH on Si |
| 14:25 | F. Pieck | Reaction dynamics in the growth of GaP |
| 14:45 | L. Ostheim | Electrical transport on GaP-on-Si-templates |
| 15:05 | S. Gupta | STEM-investigations on Ga(NAsP)-MQWH on Si |
| 15:25 | A. Bäumner | Parameter studies on the material gain in Ga(NAsP)-MQWH on Si-substrate |
| 15:45 | Coffee break | Discussions |
| 16:15 | S. Gies | Band offset in Ga(NAsP)/GaP heterostructures |
| 16:35 | F. Dobener | Band offset at the Ga(N,As,P)/GaP Heterointerface |
| 16:55 | M. Stein | Studies for the dynamic material gain of Ga(NAsP)-MQWH on Si |
| 17:15 | V. Valkovskii | Rethinking the theoretical description of photoluminescence in compound semiconductor |
Event Organizer
RTG 1782
Contact
Prof. Dr. Wolfgang Stolz